Temperature sensing device based on a novel IV-VI and IV-VI/IV-VI core/shell quantum dots-doped phospho-silicate matrix
The recent developments in temperature sensor technology resulted in a great progress in the field, being dominated by contact type sensors. On the other side, non-contact type sensors research is directed towards infrared sensors, among which optical sensors are promising devices having gains for industrial applications (oil refineries, mines, thermal and hydropower stations, etc). The project deals with innovative thin films based on PbS and PbSe/PbS quantum dots (QDs) embedded in a novel phospho-silicate matrix with complex composition, prepared by sol-gel method and spin coating technique, applied as luminescent temperature non-contact sensors for NIR (Near-infrared) range. The main objectives of the project are: i) validating a laboratory scale technology for synthesis of an innovative class of temperature-dependent luminescence optical materials based on QDs-doped phospho-silicate thin films; (ii) achieving a temperature sensing device that incorporates the synthesized materials. High luminescence efficiency based on quantum confinement effect determines QDs to become useful optical indicators for low-cost luminescence-based thermometry sensing devices operating up to 400oC.